(Hong Kong)
Product Summary
The hsd110phw1-a00 is an npn epitaxial planar transistor.
Parametrics
hsd110phw1-a00 absolute maximum ratings: (1)Maximum Temperatures Storage Temperature: -55 ~ +150 °C; (2)Junction Temperature: +150 °C Maximum; (3)Maximum Power Dissipation Total Power Dissipation (Tc=25°C): 40 W; (4)Maximum Voltages and Currents BVCBO Collector to Base Voltage: 200 V; (5)BVCEO Collector to Emitter Voltage: 60 V; (6)BVEBO Emitter to Base Voltage: 6 V; (7)IC Collector Current: 4.5 A.
Features
hsd110phw1-a00 features: (1)BVCBO: 200 V IC=5mA, IE=0; (2)BVCEO: 60 V IC=5mA, IB=0; (3)BVEBO: 6 V IE=5mA, IC=0; (4)ICBO: 0.1 mA VCB=40V, IE=0; (5)IEBO: 0.1 mA VEB=5V, IC=0; (6)*VCE(sat): 0.5 to 1 V IC=4A, IB=0.4A; (7)*VBE(sat): 1.5 V IC=4A, IB=0.4A; (8)ft: 10 MHz VCE=5V, IC=1A.
Diagrams
