Product Summary

The MA2J11200L is a Silicon epitaxial planar type Switching Diode.

Parametrics

MA2J11200L absolute maximum ratings: (1)Reverse voltage (DC) VR 40 V; (2)Peak reverse voltage VRM 40 V; (3)Average forward current IF(AV) 200 mA; (4)Peak forward current IFM 600 mA; (5)Non-repetitive peak forward surge current IFSM 1A; (6)Junction temperature Tj 150℃; (7)Storage temperature Tstg -55 to +150℃.

Features

MA2J11200L features: (1)Small S-mini type package, allowing high-density mounting; (2)Ensuring the average forward current capacity IF(AV) = 200 mA.

Diagrams

MA2J11200L block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MA2J11200L
MA2J11200L


DIODE SWITCH 40V 200MA S-MINI 2P

Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MA2J11200L
MA2J11200L


DIODE SWITCH 40V 200MA S-MINI 2P

Data Sheet

Negotiable 
MA2J11400L
MA2J11400L


DIODE RECT 150V 200MA S-MINI 2P

Data Sheet

Negotiable 
MA2J1140GL
MA2J1140GL


DIODE RECTIFIER 150V 200MA SMINI

Data Sheet

Negotiable 
MA2J11500L
MA2J11500L


DIODE RECT 200V 200MA S-MINI 2P

Data Sheet

Negotiable 
MA2J7280GL
MA2J7280GL


DIODE SCHOTT 30V 30MA S-MINI 2P

Data Sheet

Negotiable 
MA2J72900L
MA2J72900L


DIODE SCHOTT 30V 200MA S-MINI 2P

Data Sheet

Negotiable