Product Summary
The PSMN006-20K is an ultra low level FET. It uses the latest Philips TrenchMOS technology to achieve the lowest possible on-state resistance in a SOT96-1 (SO8) package. The applications of the PSMN006-20K are (1)DC to DC converter; (2)Computer motherboards; (3)Switch mode power supplies.
Parametrics
PSMN006-20K absolute maximum ratings: (1)VDS drain-source voltage: 20 V; (2)ID drain current (DC): 32A; (3)VGS gate-source voltage: ±10 V; (4)IDM peak drain current: -60A; (5)Ptot total power dissipation: 8.3 W; (6)Tstg storage temperature: 150℃; (7)T operating junction temperature: -55 to +150℃.
Features
PSMN006-20K features: (1)DC to DC converter; (2)Computer motherboards; (3)Switch mode power supplies.
Diagrams
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![]() PSMN006-20K |
![]() Other |
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![]() PSMN006-20K /T3 |
![]() NXP Semiconductors |
![]() MOSFET TAPE13 PWR-MOS |
![]() Data Sheet |
![]() Negotiable |
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![]() PSMN006-20K,518 |
![]() NXP Semiconductors |
![]() MOSFET TAPE13 PWR-MOS |
![]() Data Sheet |
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