Product Summary
The UMN10NTR is a Switching diode. It is suitable for Very fast recovery.
Parametrics
UMN10NTR absolute maximum ratings: (1)Surge current, Isurge: 4A; (2)Junction temperature, Tj: 150℃; (3)Storage temperature, Tstg: -55 to 150℃; (4)Reverse voltage (DC), VR: 80V; (5)Average rectified forward current (Single), IO: 100mA; (6)Reverse voltage (repetitive peak), VRM: 80V; (7)Forward current repetitive peak (Single), IFM: 300A; (8)Power dissipation, Pd: 200mW.
Features
UMN10NTR features: (1)Small mold type. (UMD6); (2)High reliability.
Diagrams

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![]() ROHM Semiconductor |
![]() Diodes (General Purpose, Power, Switching) SWITCH 80V 100MA |
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![]() UMN10NTR |
![]() ROHM Semiconductor |
![]() Diodes (General Purpose, Power, Switching) SWITCH 80V 100MA |
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![]() UMN11NTN |
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![]() Diodes (General Purpose, Power, Switching) SW 80V 100MA |
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![]() UMN1N |
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![]() Negotiable |
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![]() UMN1NTR |
![]() ROHM Semiconductor |
![]() Diodes (General Purpose, Power, Switching) SWITCH 80V 25MA |
![]() Data Sheet |
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![]() UMN11N |
![]() Other |
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![]() Negotiable |
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![]() UMN10N |
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![]() Negotiable |
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(Hong Kong)










