Product Summary

The blf246 is a 30 W LDMOS power transistor for base station applications at frequencies from 1800 to 2200 MHz. The applicaitons of the device include RF power amplifiers for GSM, EDGE, CDMA and W-CDMA base stations and multicarrier applications in the 1800 to 2200 MHz frequency range and Broadcast drivers

Parametrics

blf246 absolute maximum ratings: (1)VDS, drain-source voltage: 65 V; (2)VGS, gate-source voltage:±15 V; (3)ID, drain current (DC): 4.5 A; (4)Tstg, storage temperature: -65 to +150℃; (5)Tj, junction temperature: 200℃

Features

blf246 features: (1)Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA: Output power = 30 W (PEP); Gain = 12.5 dB; Efficiency = 32%; dim = -26 dBc; (2)Easy power control; (3)Excellent ruggedness; (4)High power gain; (5)Excellent thermal stability; (6)Designed for broadband operation (1800 to 2200 MHz); (7)No internal matching for broadband operation.

Diagrams

blf246 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLF246
BLF246
Other

Data Sheet
Negotiable 
BLF246,112
BLF246,112
NXP Semiconductors
Transistors RF MOSFET Power TRANSISTOR VHF PWR DMOS
Data Sheet
0-25: $71.53
BLF246B,112
BLF246B,112
NXP Semiconductors
Transistors RF MOSFET Power RF DMOS 60W VHF P-P
Data Sheet
0-41: $52.15
41-100: $47.85