(Hong Kong)
Product Summary
The blf6g20s-45 is a power LDMOS transistor. The 45W blf6g20s-45 LDMOS power transistor for base station applications at frequencies from 1800MHz to 2000MHz. Applications of the blf6g20s-45 include: RF power amplifiers for W-CDMA base stations and multicarrier applications in the 1800 MHz to 2000 MHz frequency range.
Parametrics
blf6g20s-45 absolute maximum ratings: (1) drain-source voltage VDS: 65V; (2) gate-source voltage: 1.4 to 2.4V; (3) storage temperature Tstg: -65 to +150°C; (4) case temperature Tcas: 150°C; (5) junction temperature Tj: 225°C.
Features
blf6g20s-45 features: (1) Typical 2-carrier W-CDMA performance at frequencies of 1805MHz and 1880MHz, a supply voltage of 28V and an IDq of 360mA; (2) Average output power=2.5W; (3) Power gain=19.2dBc(typ); (4) Effciency=14%; (5) ACPR=-50dBc; (6) Easy power control; (7) Integrated ESD protection; (8) Excellent ruggedness; (9) High efficiency; (10) Excellent thermal stability; (11) Designed for broadband operation (1800 MHz to 2000 MHz) ; (12) Internally matched for ease of use; (13) Qualified up to a supply voltage of 32V; (14) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances.
Diagrams
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 BLF6G20S-45,112 |
NXP Semiconductors |
Transistors RF MOSFET Power Trans MOSFET N-CH 65V 13A |
Data Sheet |
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BLF6G20S-45,118 |
NXP Semiconductors |
Transistors RF MOSFET Power N-CH 65V 13A Trans MOSFET |
Data Sheet |
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