Product Summary
The bls2933-100 is a 100W LDMOS power transistor (at a supply voltage of 32 V) for S-band radar applications in the 2.9 GHz to 3.3 GHz frequency range.
Parametrics
bls2933-100 absolute maximum ratings: (1)VDS drain-source voltage: 65 V; (2)VGS gate-source voltage: 15 V; (3)ID drain current: 12 A; (4)Tstg storage temperature: -65 to +150 °C; (5)Tj junction temperature: 200 °C.
Features
bls2933-100 features: (1)Easy power control; (2)Integrated ESD protection; (3)Excellent ruggedness; (4)Excellent thermal stability; (5)Designed for broadband operation (2.9 GHz to 3.3 GHz); (6)Internally matched for ease of use.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||
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BLS2933-100,112 |
NXP Semiconductors |
Transistors RF MOSFET Power TRANS MICRO PWR LDMOS |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||
BLS2731-10 |
Other |
Data Sheet |
Negotiable |
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BLS2731-110 |
Other |
Data Sheet |
Negotiable |
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BLS2731-110,114 |
NXP Semiconductors |
Transistors RF Bipolar Power BULKTR TNS-MICP |
Data Sheet |
Negotiable |
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BLS2731-20 |
Other |
Data Sheet |
Negotiable |
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BLS2731-20 TRAY |
NXP Semiconductors |
Transistors RF Bipolar Power BULKTR TNS-MICL |
Data Sheet |
Negotiable |
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BLS2731-20,114 |
NXP Semiconductors |
Transistors RF Bipolar Power BULKTR TNS-MICL |
Data Sheet |
Negotiable |
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