(Hong Kong)
Product Summary
The mrf321 is a RF line NPN silicon RF power transistor. It is designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range.
Parametrics
mrf321 absolute maximum ratings: (1)Collector-Emitter Voltage VCEO: 33 Vdc; (2)Collector-Base Voltage VCBO: 60 Vdc; (3)Emitter-Base Voltage VEBO: 4.0 Vdc; (4)Collector Current - Continuous, IC 1.1Adc; (5)Collector Current- Peak: 1.5Adc; (6)Total Device Dissipation, PD: 27Watts; (7)Storage Temperature Range Tstg: –65 to +150℃.
Features
mrf321 features: (1)Guaranteed Performance at 400 MHz, 28 Vdc; Output Power = 10 Watts; Power Gain = 12 dB Min; Efficiency = 50% Min; (2)100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR; (3)Gold Metallization System for High Reliability; (4)Computer–Controlled Wirebonding Gives Consistent Input Impedance.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 MRF321 |
Other |
|
Data Sheet |
Negotiable |
|
||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
MRF3010 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
MRF3094 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
MRF3095 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
MRF3104 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
MRF3105 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
MRF3106 |
Other |
|
Data Sheet |
Negotiable |
|
||||
