Product Summary

The mrf422mp is an NPN silicon rf power transistor. It is designed for applications as a high–power linear amplifier from 2.0 to 30 MHz.

Parametrics

mrf422mp absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: 40 Vdc; (2)Collector–Base Voltage VCBO: 85 Vdc; (3)Emitter–Base Voltage VEBO: 3.0 Vdc; (4)Collector Current Continuous IC: 20 Adc; (5)Withstand Current 10 s: 30 Adc; (6)Total Device Dissipation @ TC = 25℃ PD: 290Watts; Derate above 25℃: 1.66W/℃; (7)Storage Temperature Range Tstg: –65 to +150 ℃.

Features

mrf422mp features: (1)Specified 28 Volt, 30 MHz Characteristics, Output Power = 150 W (PEP), Minimum Gain = 10 dB, Efficiency = 40%; (2)Intermodulation Distortion @ 150 W (PEP), IMD = -30 dB (Min); (3)100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR.

Diagrams

mrf422mp diagram