Product Summary

The mrf430 is a silicon rf power transistor. It is designed primarily for application as complementary symmetry amplifiers in linear amplifiers from 2.0 to 30MHz.

Parametrics

mrf430 absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: 18 Vdc; (2)Collector–Base Voltage VCBO: 36 Vdc; (3)Emitter–Base Voltage VEBO: 4.0 Vdc; (4)Collector Current Continuous IC: 2.5 Adc; (5)Total Device Dissipation @ TC = 25℃ PD: 20Watts; Derate above 25℃: 114W/℃; (6)Storage Temperature Range Tstg: –65 to +150 ℃.

Features

mrf430 features: (1)Specified 12.5 Volt, 30 MHz Characteristics. Output Power = 12.5 W(PEP). Minimum Gain = 20 dB. Efficiency = 50%; (2)Intermodulation Distortion @ 12.5 W (PEP). IMD = -30 dB (Max).

Diagrams

mrf430 diagram