Product Summary

The mrf6522-10r1 is an N–Channel Enhancement–Mode Lateral MOSFET. Designed for GSM 900 frequency band, the high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 26 volt base station equipment.

Parametrics

mrf6522-10r1 absolute maximum ratings: (1)Drain–Source Voltage VDSS: 65 Vdc; (2)Gate–Source Voltage VGS: ±20 Vdc; (3)Drain Current — Continuous ID: 7 Adc; (4)Total Device Dissipation PD: 159W @ TC ≥ 25°C; 0.9W/°C; (5)Derate above 25°C; (6)Storage Temperature Range Tstg: –65 to +150 °C; (7)Operating Junction Temperature TJ: 200 °C.

Features

mrf6522-10r1 features: (1)Specified Performance @ Full GSM Band, 921–960 MHz, 26 Volts; (2)Output Power, P1dB — 80 Watts (Typ); (3)Power Gain @ P1dB — 16 dB (Typ); (4)Efficiency @ P1dB — 58% (Typ); (5)Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.

Diagrams

mrf6522-10r1 block diagram

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