(Hong Kong)
Product Summary
The mrf839 is an NPN silicon RF power transisitor designed for Class AB, Common Emitter Applicatons Up to 960 MHz.
Parametrics
mrf839 absolute maximum ratings: (1)IC: 600 mA; (2)VCBO: 36 V; (3)PDISS: 20 W @ TC = 25 °C; (4)TJ: -55 °C to +200 °C; (5)TSTG: -55 °C to +200 °C; (6)θθθθJC: 9.0 °C/W.
Features
mrf839 features: (1)Gold Metallization; (2)Input Matching Network; (3)High Gain.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 MRF839F |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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MRF837 |
Other |
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Data Sheet |
Negotiable |
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MRF8372LF |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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MRF8372LFR1 |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
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MRF8372LFR2 |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
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MRF838A |
Other |
|
Data Sheet |
Negotiable |
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MRF839F |
Other |
|
Data Sheet |
Negotiable |
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