(Hong Kong)
Product Summary
The PT333-3C is a high speed and high sensitive NPN silicon NPN epitaxial planar phototransistor molded in a standard 5 mm package. Due to is water clear epoxy the device is sensitive to visible and near Infrared radiation. The applications of the PT333-3C are Infrared applied system, Camera, Cockroach catcher.
Parametrics
PT333-3C absolute maximum ratings: (1)collector-emitter voltage vceo: 30 V; (2)emitter-collector voltage veco: 5 V; (3)collector current ic: 20 mA; (4)operating temperature range topr: -25 to +85 ℃; (5)storage temperature range tstg: -40 to +85 ℃; (6)lead soldering temperature(1/16 inch from body for 5 sec.)tsol: 260 ℃; (7)power dissipation at (or below)25°c free air temperature pc: 75mW.
Features
PT333-3C features: (1)Fast response time; (2)High photo sensitivity; (3)Pb free; (4)This product itself will remain within RoHS compliant version.
Diagrams
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 PT333-3C |
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Photodetector Transistors IR Phototransistor |
Data Sheet |
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