Product Summary
The EL1013(TA)-VG is an infrared emitting diode, optically coupled to a phototransistor detector. Compound use free halogens and Sb2O3. It is packaged in a 4-pin SOP package. And this device can be used in programmable controllers, system appliances, measuring instruments, telecommunication equipments, home appliances, such as fan heaters, etc., signal transmission between circuits of different potentials and impedances.
Parametrics
EL1013(TA)-VG absolute maximum ratings: (1)Forward current: 60 mA; (2)Reverse Voltage: 6V; (3)Power Dissipation: 100mW; (4)Collector-Emitter voltage: 80 V; (5)Emitter-Collector voltage: 7 V; (6)Total power dissipation: 250 mW; (7)Storage temperature range: -55 to +125 °C; (8)Isolation voltage: 5000 V rms; (9)Soldering temperature:260 °C.
Features
EL1013(TA)-VG features: (1)Free halogens compliant; (2)Current transfer ratio; (3)High isolation voltage between input and output (Viso=5000 Vrms); (4)Compact 4 Pin SOP with a 2.0 mm profile; (5)8mm long creepage distance; (6)Pb free and RoHS compliant.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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EL1013(TA)-VG |
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