Product Summary

The EL357(B)(TA) contains a gallium arsenic infrared emitting diode optically coupled to a phototransistor. It is packaged in a 4-pin SMD package, And this device can be used in hybrid substrates that require high density mounting, programmable controllers, system appliances, measuring instruments, telecommunication, electric home appliances, such as fan heaters, etc. and signal transmission between circuits of different potentials and impedances.

Parametrics

EL357(B)(TA) absolute maximum ratings: (1)Forward current: 50 mA; (2)Reverse Voltage: 6V; (3)Power Dissipation: 70mW; (4)Collector-Emitter voltage: 35 V; (5)Emitter-Collector voltage: 6 V; (6)Total power dissipation: 200 mW; (7)Storage temperature range: -55 to +125 °C; (8)Isolation voltage: 3750 V rms; (9)Soldering temperature:260 °C.

Features

EL357(B)(TA) features: (1)Current transfer ratio (CTR:MIN.50% at IF =5mA ,VCE =5V); (2)Isolation voltage between input and output; (3)Subminiature type (The volume is small than that of conventional DIP type by as far as 30%); (4)Mini-flat package EL357:1-channel type; (5)Pb free; (6)The product itself will remain within RoHS compliant version.

Diagrams

EL357(B)(TA) pin connection