Product Summary
The EL3H7(B)(TA)-G consists of an infrared emitting diode, optically coupled to a phototransistor detector encapsulated with green compound. This device is packaged in a 4-pin small outline SMD package. And this device can be used in DC-DC converters, programmable controllers, telephone line interface and signal transmission between circuits of different potentials and impedances.
Parametrics
EL3H7(B)(TA)-G absolute maximum ratings: (1)Forward current: 50 mA; (2)Peak forward current (t = 10μs): 1A; (3)Power dissipation (No derating required up to Ta=100°C): 70mW; (4)Collector-Emitter voltage: 80 V; (5)Emitter-Collector voltage: 7 V; (6)Total power dissipation: 200 mW; (7)Storage temperature range: -55 to +125 °C; (8)Isolation voltage: 3750 V rms; (9)Soldering temperature:260 °C.
Features
EL3H7(B)(TA)-G features: (1)Halogens free; (2)Current transfer ratio; (3)High isolation voltage between input and output (Viso=3750 Vrms); (4)Compact 4 Pin SSOP with a 2.0 mm profile; (5)Pb free and RoHS compliant; (6)UL approved (No. E214129); (7)VDE approved (No. 132249); (8)CSA approved.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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EL3H7(B)(TA)-G |
Everlight |
Transistor Output Optocouplers 50-600CTR 3750Vrms -55 to +110 Op Temp |
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