Product Summary

The EL817M(B)(DT)(LGDD) contains an infrared emitting diode optically coupled to a phototransistor. It is packaged in a 4-pin DIP package and available in wide-lead spacing and SMD option. And this device can be used in (1)computer terminals; (2)system appliances, measuring instruments; (3)registers, copiers, automatic vending machines; (4)cassette type recorder; (5)electric home appliances, such as fan heaters, etc.; (6)signal transmission between circuits of different potentials.

Parametrics

EL817M(B)(DT)(LGDD) absolute maximum ratings: (1)Forward current: 60 mA; (2)Reverse Voltage: 6V; (3)Power Dissipation: 100mW; (4)Collector-Emitter voltage: 35 V; (5)Emitter-Collector voltage: 6 V; (6)Total power dissipation: 200 mW; (7)Storage temperature range: -55 to +125 °C; (8)Isolation voltage: 5000 V rms; (9)Soldering temperature:260 °C; (10)Operating temperature: -55 to +110°C.

Features

EL817M(B)(DT)(LGDD) features: (1)Current transfer ratio (CTR:MIN.50% at IF =5mA ,VCE =5V); (2)High isolation voltage between input and output (Viso=5000 Vrms ); (3)Compact dual-in-line package EL816:1-channel type; (4)Pb free; (5)UL approved (No. E214129); (6)VDE approved (No. 132249); (7)CSA approved; (8)FIMKO approved.

Diagrams

EL817M(B)(DT)(LGDD) pin connection