(Hong Kong)
Product Summary
The BGF944 is a GSM900 EDGE power module, and it is the 17W LDMOS power amplifier module for base station amplifier applications in the 920 to 960 MHz band. This device can be used in base station RF power amplifiers in the 920 to 960 MHz frequency band, GSM, GSM EDGE, multi carrier applications and macrocell (driver stage) and Microcell (final stage).
Parametrics
BGF944 absolute maximum ratings: (1)DC supply voltage: 30V; (2)input drive power: 100 mW; (3)load power: 24 W; (4)storage temperature: -30 to +100°C; (5)operating mounting base temperature: -20 to +90°C.
Features
BGF944 features: (1)Low distortion to a GSM EDGE signal; (2)Excellent 2-tone performance; (3)Low die temperature due to copper flange; (4)Integrated temperature compensated bias; (5)50 W input/output impedance; (6)Flat gain over frequency band.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 BGF944 |
NXP Semiconductors |
RF Amplifier LDMOS MOD |
Data Sheet |
Negotiable |
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 |
BGF944,127 |
NXP Semiconductors |
RF Amplifier LDMOS MOD |
Data Sheet |
Negotiable |
|
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