Product Summary
The BLF1820-70 is an UHF power LDMOS transistor that is produced by Philips Semiconductors. The 70W LDMOS power transistor for base station applications at frequencies from 1800 to 2000 MHz. This device can be used in RF power amplifiers for GSM, EDGE and CDMA base stations and multicarrier applications in the 1800 to 2000 MHz frequency range.
Parametrics
BLF1820-70 absolute maximum ratings: (1)drain-source voltage: 65V; (2)gate-source voltage: ±15V; (3)DC drain current: 9A; (4)storage temperature: -65 to +150°C; (5)junction temperature: 200°C.
Features
BLF1820-70 features: (1)Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA; (2)Easy power control; (3)Excellent ruggedness; (4)High power gain; (5)Excellent thermal stability; (6)Designed for broadband operation (1800 to 2000 MHz); (7)Internally matched for ease of use.
Diagrams
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BLF1820-70 |
Other |
Data Sheet |
Negotiable |
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Image | Part No | Mfg | Description | Pricing (USD) |
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BLF1043 |
NXP Semiconductors |
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Data Sheet |
Negotiable |
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BLF1043,112 |
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Transistors RF MOSFET Power RF LDMOS 10W UHF |
Data Sheet |
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BLF1043,135 |
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BLF1046 |
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Transistors RF MOSFET Power RF LDMOS 45W UHF |
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Negotiable |
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BLF1046,112 |
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Transistors RF MOSFET Power RF LDMOS 45W UHF |
Data Sheet |
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BLF1046,135 |
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