Product Summary

The BLF1820-70 is an UHF power LDMOS transistor that is produced by Philips Semiconductors. The 70W LDMOS power transistor for base station applications at frequencies from 1800 to 2000 MHz. This device can be used in RF power amplifiers for GSM, EDGE and CDMA base stations and multicarrier applications in the 1800 to 2000 MHz frequency range.

Parametrics

BLF1820-70 absolute maximum ratings: (1)drain-source voltage: 65V; (2)gate-source voltage: ±15V; (3)DC drain current: 9A; (4)storage temperature: -65 to +150°C; (5)junction temperature: 200°C.

Features

BLF1820-70 features: (1)Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA; (2)Easy power control; (3)Excellent ruggedness; (4)High power gain; (5)Excellent thermal stability; (6)Designed for broadband operation (1800 to 2000 MHz); (7)Internally matched for ease of use.

Diagrams

BLF1820-70 pin connection

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BLF1820-70
BLF1820-70

Other


Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
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BLF1043
BLF1043

NXP Semiconductors

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Data Sheet

Negotiable 
BLF1043,112
BLF1043,112

NXP Semiconductors

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Data Sheet

0-107: $20.21
107-250: $18.88
BLF1043,135
BLF1043,135

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Data Sheet

0-271: $24.91
BLF1046
BLF1046

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Data Sheet

Negotiable 
BLF1046,112
BLF1046,112

NXP Semiconductors

Transistors RF MOSFET Power RF LDMOS 45W UHF

Data Sheet

0-41: $43.52
41-100: $40.66
BLF1046,135
BLF1046,135

NXP Semiconductors

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Data Sheet

0-243: $47.90