Product Summary
The BSS84P is a SIPMOS small-signal-transistor.
Parametrics
BSS84P absolute maximum ratings: (1)Continuous drain current TA=25°C ID: -0.17 A; TA=70°C ID: -0.14 A; (2)Pulsed drain current TA=25°C ID puls: -0.68 A; (3)Avalanche energy, single pulse ID=-0.17 A , VDD=-25V, RGS=25Ω EAS: 2.6 mJ; (4)Avalanche energy, periodic limited by Tjmax EAR: 0.036 mJ; (5)Reverse diode dv/dt IS=-0.17A, VDS=-48V, di/dt=-200A/μs, Tjmax=150°C dv/dt: -6 kV/μs; (6)Gate source voltage VGS: ±20 V; (7)Power dissipation TA=25°C Ptot: 0.36 W; (8)Operating and storage temperature Tj , Tstg: -55 to +150 °C; (9)IEC climatic category; DIN IEC 68-1: 55/150/56 °C.
Features
BSS84P features: (1)P-channel; (2)Enhancement mode; (3)Logic level; (4)Avalanche rated; (5)dv/dt rated.
Diagrams
Image | Part No | Mfg | Description | ![]() |
Pricing (USD) |
Quantity | ||||||||||||
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![]() |
![]() BSS84P H6327 |
![]() Infineon Technologies |
![]() MOSFET P-KANAL |
![]() Data Sheet |
![]()
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![]() |
![]() BSS84P L6327 |
![]() Infineon Technologies |
![]() MOSFET P-CH 60V 0.17A |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() BSS84P-E6327 |
![]() |
![]() MOSFET P-CH 60V 170MA SOT-23 |
![]() Data Sheet |
![]() Negotiable |
|
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![]() |
![]() BSS84PW |
![]() |
![]() MOSFET P-CH 60V 150MA SOT-323 |
![]() Data Sheet |
![]() Negotiable |
|
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![]() |
![]() BSS84PW L6327 |
![]() Infineon Technologies |
![]() MOSFET P-CH 60V 0.15A |
![]() Data Sheet |
![]() Negotiable |
|
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![]() |
![]() BSS84P L6433 |
![]() Infineon Technologies |
![]() MOSFET SIPMOS Sm-Signal TRANSISTOR |
![]() Data Sheet |
![]() Negotiable |
|
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![]() |
![]() BSS84P E6433 |
![]() |
![]() MOSFET P-CH 60V 170MA SOT-23 |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() BSS84P |
![]() Other |
![]() |
![]() Data Sheet |
![]() Negotiable |
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