Product Summary

The BSS84P is a SIPMOS small-signal-transistor.

Parametrics

BSS84P absolute maximum ratings: (1)Continuous drain current TA=25°C ID: -0.17 A; TA=70°C ID: -0.14 A; (2)Pulsed drain current TA=25°C ID puls: -0.68 A; (3)Avalanche energy, single pulse ID=-0.17 A , VDD=-25V, RGS=25Ω EAS: 2.6 mJ; (4)Avalanche energy, periodic limited by Tjmax EAR: 0.036 mJ; (5)Reverse diode dv/dt IS=-0.17A, VDS=-48V, di/dt=-200A/μs, Tjmax=150°C dv/dt: -6 kV/μs; (6)Gate source voltage VGS: ±20 V; (7)Power dissipation TA=25°C Ptot: 0.36 W; (8)Operating and storage temperature Tj , Tstg: -55 to +150 °C; (9)IEC climatic category; DIN IEC 68-1: 55/150/56 °C.

Features

BSS84P features: (1)P-channel; (2)Enhancement mode; (3)Logic level; (4)Avalanche rated; (5)dv/dt rated.

Diagrams

BSS84P pin connection 

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BSS84P
BSS84P
Other

Data Sheet
Negotiable 
BSS84P E6433
BSS84P E6433

MOSFET P-CH 60V 170MA SOT-23
Data Sheet
Negotiable 
BSS84P H6327
BSS84P H6327
Infineon Technologies
MOSFET P-KANAL
Data Sheet
0-1: $0.19
1-10: $0.16
10-100: $0.10
100-500: $0.07
BSS84P L6327
BSS84P L6327
Infineon Technologies
MOSFET P-CH 60V 0.17A
Data Sheet
Negotiable 
BSS84P L6433
BSS84P L6433
Infineon Technologies
MOSFET SIPMOS Sm-Signal TRANSISTOR
Data Sheet
Negotiable 
BSS84P-E6327
BSS84P-E6327

MOSFET P-CH 60V 170MA SOT-23
Data Sheet
Negotiable 
BSS84PW
BSS84PW

MOSFET P-CH 60V 150MA SOT-323
Data Sheet
Negotiable 
BSS84PW L6327
BSS84PW L6327
Infineon Technologies
MOSFET P-CH 60V 0.15A
Data Sheet
Negotiable