Product Summary

The IPW60R045CP is a CoolMOS Power Transistor.

Parametrics

IPW60R045CP absolute maximum ratings: (1)Continuous drain current: 60A; (2)Pulsed drain current: 23; (3)Avalanche energy, single pulse: 1950 mJ; (4)Avalanche energy, repetitive t AR, EAR I D=11 A, V DD=50 V: 3mJ; (5)Avalanche current, repetitive t AR: 11A; (6)MOSFET dv /dt ruggedness: 50V/ns; (7)Gate source voltage: ±20V; (8)Power dissipation: 431W; (9)Operating and storage temperature: -55 to 150°C.

Features

IPW60R045CP features: (1)Worldwide best Rds, on in TO247; (2)Ultra low gate charge; (3)Extreme dv/dt rated; (4)High peak current capability; (5)Qualified according to JEDEC1)for target applications; (6)Pb-free lead plating; RoHS compliant.

Diagrams

IPW60R045CP package dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IPW60R045CP
IPW60R045CP
Infineon Technologies
MOSFET N-CH 600 V 60 A
Data Sheet
0-1: $7.57
1-10: $6.37
10-100: $5.84
100-250: $4.98
IPW60R045CPA
IPW60R045CPA
Infineon Technologies
MOSFET CoolMOS Power Transistor
Data Sheet
0-142: $9.73
142-500: $8.29