(Hong Kong)
Product Summary
The P4NK60ZFP is a SuperMESH Power MOSFET. The P4NK60ZFP is obtained through an extreme optimization of ST well established stripbased powerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. The P4NK60ZFP complements ST full range of high voltage MOSFETs including revolutionary MDmesh products. Applications are (1)High current, high speed switching; (2)Ideal for off-line power supplies, adaptors and pfc; (3)Lighting.
Parametrics
P4NK60ZFP absolute maximum ratings: (1)Drain-source voltage (VGS = 0): 600 V; (2)Drain-gate voltage (RGS = 20 kW): 600 V; (3)Gate- source Voltage: ± 30 V; (4)Drain current (continuous)at TC = 25°C: 4 A; (5)Drain current (continuous)at TC = 100°C: 2.5 A; (6)Drain current (pulsed): 16 A; (7)Total dissipation at TC = 25°C: 70 W; (8)Derating factor: 0.56 W/°C; (9)Gate source ESD(HBM-C=100pF, R=1.5KW): 3000 V; (10)Peak diode recovery voltage slope: 4.5 V/ns; (11)Insulation withstand voltage (DC): 2500 V; (12)Operating Junction Temperature: -55 to 150 °C; (13)Storage Temperature: -55 to 150 °C.
Features
P4NK60ZFP features: (1)TypicaL RDS(on)= 1.76 W; (2)Extremely high dv/dt capability; (3)100% avalanche tested; (4)Gate charge minimized; (5)Very low intrinsic capacitances; (6)Very good manufacturing repeatibility.
Diagrams
