Product Summary

The BLF247B is a VHF push-pull power MOS transistor that is produced by Philips Semiconductors. Silicon N-channel enhancement mode vertical D-MOS push-pull transistor encapsulated in a 4-lead, SOT262A1 balanced flange type package with two ceramic caps. The mounting flange provides the common source connection for the transistor. This device can be used in the VHF frequency range.

Parametrics

BLF247B absolute maximum ratings: (1)drain-source voltage: 65V; (2)gate-source voltage: ±20V; (3)DC drain current: 13A; (4)storage temperature: -65 to +150°C; (5)junction temperature: 200°C; (6)total power dissipation: 280 W.

Features

BLF247B features: (1)High power gain; (2)Easy power control; (3)Good thermal stability; (4)Withstands full load mismatch. ; (5)Excellent thermal stability; (6)Designed for broadband operation (HF to 2.2 GHz); (7)Internal input and output matching for high gain and efficiency.

Diagrams

BLF247B pin connection

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