(Hong Kong)
Product Summary
The fll410ik-4c is a partially matched 40 Watt GaAs FET that is designed for use in 3.4~3.7GHz band amplifiers. This new product is uniquely suited for use in MMDS applications as it offers excellent linearity, high efficiency, high gain, long term reliability and ease of use.
Parametrics
fll410ik-4c absolute maximum ratings: (1)Drain-Source Voltage: 15 V; (2)Gate-Source Voltage: -5 V; (3)Total Power Dissipation: 107 W; (4)Storage Temperature: -65 to +175 ℃; (5)Channel Temperature: 175 ℃.
Features
fll410ik-4c features: (1)High Output Power: Pout=46.0dBm(Typ.); (2)High Gain: GL=11.5dB(Typ.); (3)High PAE: ηadd=44%(Typ.); (4)Broad Band: 3.4~3.7GHz; (5)Hermetically Sealed Package.
Diagrams
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| Image | Part No | Mfg | Description | |
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FLL410IK-4C |
Other |
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Data Sheet |
Negotiable |
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