(Hong Kong)
Product Summary
The fll800iq-3 is a l-band high power gaas fet. The fll800iq-3 is a 80 Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers. Applications are (1)Solid State Base-Station Power Amplifier; (2)W-CDMA and IMT 2000 Communication Systems.
Parametrics
fll800iq-3 absolute maximum ratings: (1)Drain-Source Voltage VDS: 15 V; (2)Gate-Source Voltage VGS: -5 V; (3)Total Power Dissipation PT Tc = 25°C: 136 W; (4)Storage Temperature Tstg: -65 to +175°C; (5)Channel Temperature tch: 175°C.
Features
fll800iq-3 features: (1)Push-Pull Configuration; (2)High Power Output: 80W (Typ.); (3)High PAE: 50% (Typ.); (4)Broad Frequency Range: 2100 to 2200 MHz.; (5)Suitable for class AB operation.
Diagrams
