IXFN24N100

IXFN24N100, power MOSFET, 1000 V, 96 A, 600 W, DIP

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Price:: US $3.31~3.33 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 100 :	3.33 / Piece
101 ~ 200 :	3.32 / Piece
201 ~ 300 :	3.31 / Piece

PartNumber:: IXFN24N100

Brand:: IXYS Corporation - ixys | D/C: 08+

Availability:: Supply Ability: 2000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-07-22

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Part Number:IXFN24N100
US $3.31 - 3.33
Quantity:

piece

Product Summary

The ixfn24n100 is a power MOSFET. Applications are (1)DC-DC converters; (2)Switched-mode and resonant-mode power supplies, >500kHz switching; (3)DC choppers; (4)Pulse generation; (5)Laser drivers.

Parametrics

ixfn24n100 absolute maximum ratings: (1)VDSS TJ = 25°C to 150°C: 1000 V; (2)VDGR TJ = 25°C to 150°C; RGS = 1 MΩ: 1000 V; (3)VGS Continuous: ±20 V; (4)VGSM Transient: ±3 0 V; (5)ID25 TC = 25°C: 24 A; (6)IDM TC = 25°C, pulse width limited by TJM: 96 A; (7)IAR TC = 25°C: 24 A; (8)EAR TC = 25°C: 60 mJ; (9)EAS TC = 25°C: 3 0 J .; (10)dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS,: 10 V/ns; (11)PD TC = 25°C: 600 W; (12)TJ: -55 to +150 °C; (13)TJM: 150 °C; (14)Tstg: -55 to +150 °C.

Features

ixfn24n100 features: (1)RF capable MOSFETs; (2)Double metal process for low gate resistance; (3)Unclamped Inductive Switching (UIS)rated; (4)Low package inductance: easy to drive and to protect; (5)Fast intrinsic rectifier.