(Hong Kong)
Product Summary
The mg50q6es40 is an N Channel IGBT. Applications of the mg50q6es40 are high power switching applications. motor control.
Parametrics
mg50q6es40 absolute maximum ratings: (1)Colleetor-Emitter Voltage VCES: 1200 V; (2)Gate-Emitter Voltage VGES: + 20 V; (3)Collector Power Dissipation (Te = 25℃) PC: 250 W; (4)Junction Temperature Tj: 150 ℃; (5)Storage Temperature Range Tstg: -40-125 ℃; (6)Isolation Voltage vIsol: 2500 (AC 1 minute) V; (7)Screw Torque (Terminal / Mounting): 2/3 N·m.
Features
mg50q6es40 features: (1)The Electrodes are Isolated from Case; (2)6 IGBTs are Built Into 1 Package; (3)Enhancement-Mode; (4)Low Saturation Voltage: VCE (sat) =4.0V (Max.); (5)High Speed: tf= 0.5μs (Max.).
Diagrams
