(Hong Kong)
Product Summary
The mrf327 is an NPN silicon rf power transistor. It is designed for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range.
Parametrics
mrf327 absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: 33 Vdc; (2)Collector–Base Voltage VCBO: 60 Vdc; (3)Emitter–Base Voltage VEBO: 4.0 Vdc; (4)Collector Current — Continuous IC: 9.0 Adc; (5)Total Device Dissipation @ TC = 25℃ PD: 250 Watts, Derate above 25℃: 1.43 W/℃; (6)Storage Temperature Range Tstg: – 65 to +150 ℃.
Features
mrf327 features: (1)Guaranteed Performance @ 400 MHz, 28 Vdc, Output Power = 80 Watts over 225 to 400 MHz Band, Minimum Gain = 7.3 dB @ 400 MHz; (2)Built-in Matching Network for Broadband Operation Using Double Match Technique; (3)100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR; (4)Gold Metallization System for High Reliability Applications; (5)Characterized for 100 to 500 MHz.
Diagrams
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 MRF327 |
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