Product Summary

The mrf587 is an NPN silicon high-frequency transistor. The mrf587 is designed for use in high-gain, low-noise, ultra-lin, tuned and wideband amplifiers. The mrf587 is ideal for use in CATV, MATV, and instrumentation applications.

Parametrics

mrf587 absolute maximum ratings: (1) Collector-Emitter Voltage VCEO: 17V; (2) Collector-Base Voltage VCBO: 34V; (3) Emitter-Base Voltage VEBO: 2.5V; (4) Collector Current-Continuous Ic: 200mA; (5) Total Device Dissipation@TC=50°C, PD: 5W,Derate above Tc=50°C: 33mW/°C; (6) Storage Temperature Range Tstg: -65 to +150°C; (7) Junction Temperature Tj: 200°C.

Features

mrf587 features: (1) Low Noise Figure-NF=3.0 dB (Typ) @f=500 MHz, IC=90mA; (2) High Power Gain-GU (max)=16.5 dB (Typ) @ f=500MHz; (3) Ion Implanted; (4) All Gold Metal System; (5) High Ft-5.5 GHz; (6) Low Intermodulation Distortion: TB=-70 dB, DIN=125dBμV; (7) Nichrome Emitter Ballast Resistors.

Diagrams

mrf587 circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF587
MRF587
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $46.80
1-10: $39.00
10-25: $35.10
25-50: $31.20
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF517
MRF517
Other

Data Sheet
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MRF5174
MRF5174
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $39.60
1-10: $33.00
10-25: $29.70
25-50: $26.40
MRF5176
MRF5176
Advanced Semiconductor, Inc.
Transistors RF Bipolar Power RF Transistor
Data Sheet
0-1: $45.00
1-10: $37.50
10-25: $33.75
25-50: $30.00
MRF521
MRF521
Other

Data Sheet
Negotiable 
MRF5211LT1
MRF5211LT1
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Data Sheet
Negotiable 
MRF525
MRF525
TriQuint Semiconductor
RF Amplifier RF Bipolar Trans
Data Sheet
Negotiable