Product Summary

The K4M561633G-BN75 is a 268,435,456 bits synchronous high data rate Dynamic RAM. The K4M561633G-BN75 is organized as 4 x 4,196,304 words by 16 bits, fabricated with high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the K4M561633G-BN75 to be useful for a variety of high bandwidth, high performance memory system applications.

Parametrics

K4M561633G-BN75 absolute maximum ratings: (1)Voltage on any pin relative to Vss, VIN, VOUT: -1.0 to 4.6 V; (2)Voltage on VDD supply relative to Vss, VDD, VDDQ: -1.0 to 4.6 V; (3)Storage temperature, TSTG: -55 to +150℃; (4)Power dissipation, PD: 1.0 W; (5)Short circuit current, IOS: 50 mA.

Features

K4M561633G-BN75 features: (1)3.0V & 3.3V power supply; (2)LVCMOS compatible with multiplexed address; (3)Four banks operation; (4)MRS cycle with address key programs: CAS latency (1, 2 & 3); Burst length (1, 2, 4, 8 & Full page); Burst type (Sequential & Interleave); (5)EMRS cycle with address key programs; (6)All inputs are sampled at the positive going edge of the system ; (7)clock ; (8)Burst read single-bit write operation.; (9)Special Function Support.; (10)DQM for masking; (11)Auto refresh; (12)64ms refresh period (8K cycle); (13)Commercial Temperature Operation (-25 ~ 70℃); (14)Extended Temperature Operation (-25 ~ 85℃); (15)54Balls FBGA.

Diagrams

K4M561633G-BN75 block diagram

K4M56323LE
K4M56323LE

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K4M563233D-M(E)E/N/I/P

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K4M513233E-M(E)C/L/F

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K4M51163LE-Y(P)C/L/F

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Data Sheet

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