Product Summary

The BLF6G10LS-160RN is a Power LDMOS transistor. The 160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Application is RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and multi carrier applications in the 700 MHz to 1000 MHz frequency range.

Parametrics

BLF6G10LS-160RN absolute maximum ratings: (1)Drain-source voltage: 65 V; (2)Gate-source voltage: -0.5 +13 V; (3)Drain current: 39 A; (4)Storage temperature: -65 to +150 °C; (5)Junction temperature: 225 °C.

Features

BLF6G10LS-160RN features: (1)Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 32 V and an IDq of 1200 mA: Average output power = 32 W; Power gain = 22.5 dB; Efficiency = 27 %; ACPR = -41 dBc; (2)Easy power control; (3)Integrated ESD protection; (4)Excellent ruggedness; (5)High efficiency; (6)Excellent thermal stability; (7)Designed for broadband operation (700 MHz to 1000 MHz); (8)Internally matched for ease of use; (9)Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS).

Diagrams

BLF6G10LS-160RN pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLF6G10LS-160RN,11
BLF6G10LS-160RN,11
NXP Semiconductors
Transistors RF MOSFET Power Trans MOSFET N-CH 65V 39A 3-Pin
Data Sheet
0-41: $49.86
41-100: $45.76
BLF6G10LS-160RN:11
BLF6G10LS-160RN:11
NXP Semiconductors
Transistors RF MOSFET Power Trans MOSFET N-CH 65V 39A 3-Pin
Data Sheet
0-68: $49.86
68-100: $45.76