Product Summary
The blf6g27ls-100 is a 10W LDMOS power transistor for base station applications at frequencies from 2500MHz to 2700MHz. The applications are RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2500 MHz to 2700 MHz frequency range.
Parametrics
blf6g27ls-100 absolute maximum ratings: (1)VDS, drain-source voltage: 65V; (2)VGS, gate-source voltage: -0.5 to +13V; (3)Tstg, storage temperature: -65 to +150 °C; (4)Tcase, case temperature: 150 °C; (5)Tj, junction temperature: 225 °C.
Features
blf6g27ls-100 features: (1)Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V andan IDq of 130 mA; (2)Qualified up to a maximum VDS operation of 32 V; (3)Integrated ESD protection; (4)Excellent ruggedness; (5)High efficiency; (6)Excellent thermal stability; (7)Designed for broadband operation; (8)Internally matched for ease of use; (9)Low gold plating thickness on leads; (10)Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS).
Diagrams
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![]() BLF6G27LS-100,112 |
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![]() BLF6G27LS-100,118 |
![]() NXP Semiconductors |
![]() Transistors RF MOSFET Power Single 65V 29A 0.16Ohms |
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