Product Summary

The blf7g27ls-100 is a 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. The application of it is RF power amplifiers for base stations and multi carrier applications in the 2500 MHz to 2700 MHz frequency range.

Parametrics

blf7g27ls-100 absolute maximum ratings: (1)drain-source voltage: - 65 V; (2)gate-source voltage: -0.5 to +13 V; (3)drain current: - 28 A; (4)storage temperature: -65 to +150°C; (5)junction temperature: - 200°C.

Features

blf7g27ls-100 features: (1)Excellent ruggedness; (2)High efficiency; (3)Low Rth providing excellent thermal stability; (4)Designed for low memory effects providing excellent pre-distortability; (5)Internally matched for ease of use; (6)Integrated ESD protection; (7)Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS).

Diagrams

blf7g27ls-100 pin configuration

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BLF7G27LS-100,112
BLF7G27LS-100,112
NXP Semiconductors
Transistors RF MOSFET Power Single 65V
Data Sheet
0-41: $48.80
41-100: $44.78
BLF7G27LS-100,118
BLF7G27LS-100,118
NXP Semiconductors
Transistors RF MOSFET Power Single 65V
Data Sheet
0-68: $48.80
68-100: $44.78