Product Summary
The FDB5800 is a N-channel logic level powertrench MOSFET. The applicaitons of it include: (1)Motor/ Body Load Control; (2)ABS Systems; (3)Power Train Management; (4)Injection Systems; (5)DC-DC Converters and Off-Line UPS.
Parametrics
FDB5800 absolute maxing ratings: (1)VDSS Drain to Source Voltage: 60V; (2)VGS Gate to Source Voltage: ±20V; (3)ID Drain Current Continuous(TC<102℃, VGS=10V): 80A; Continuous (TC<90℃, VGS=5V): 80A; Continuous (Tamb=25℃, VGS=10V, with RθJA=43℃/W): 14A; (4)EAS Single Pulse Avalanche Energy: 652mJ; (5)PD Power dissipation: 242W; Derate above 25℃: 1.61W/℃; (6)TJ, TSTG Operating and Storage Temperature: -55 to 175℃.
Features
FDB5800 features: (1)DS(ON)=5.5mΩ (Typ.), VGS=5V, ID=80A; (2)High performance trench technology for extermely low Rdson; (3)Low Gate Charge; (4)High power and current handling capability; (5)Qualified to AEC Q101; (6)RoHS Compliant.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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FDB5800 |
Fairchild Semiconductor |
MOSFET 60V N-Ch Logic PowerTrench MOSFET |
Data Sheet |
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FDB5800_F085 |
Fairchild Semiconductor |
MOSFET 60V N-Ch PowerTrench |
Data Sheet |
Negotiable |
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