(Hong Kong)
Product Summary
The blf872 is a 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of blf872 makes it ideal for digital transmitter applications. The applications of the device include Communication transmitter applications in the UHF band and Industrial applications in the UHF band.
Parametrics
blf872 absolute maximum ratings: (1)drain-source voltage: 89 V; (2)gate-source voltage: -0.5 to +13 V; (3)storage temperature: -65 to +150 ℃; (4)junction temperature: - 200 ℃.
Features
blf872 features: (1)2-tone performance at 860 MHz, a drain-source voltage VDS of 42 V and a quiescent drain current IDq = 1.4 A: Peak envelope power load power = 300 W, Power gain = 21 dB, Drain efficiency = 46 %, Third order intermodulation distortion = -35 dBc; (2)DVB performance at 858 MHz, a drain-source voltage VDS of 42 V and a quiescent drain current IDq = 1.4 A: Average output power = 75 W, Power gain = 21 dB, Drain efficiency = 32 %, Third order intermodulation distortion = -32 dBc (4.3 MHz from center frequency).
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
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 BLF872 |
NXP Semiconductors |
Transistors RF MOSFET Power RF LDMOS 300W UHF |
Data Sheet |
Negotiable |
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BLF872,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF LDMOS 300W UHF |
Data Sheet |
Negotiable |
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