Product Summary

The FLL21E090IK is a high power GaAs FET that offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers. This device is targeted for high voltage, low current operation in digitally modulated base station amplifiers. The FLL21E090IK is ideally suited for W-CDMA base station amplifiers while offering high gain, long term reliability and ease of use.

Parametrics

FLL21E090IK absolute maximum ratings: (1)Drain-Source Voltage: 32 V; (2)Gate-Source Voltage: -3 V; (3)Total Power Dissipation: 125 W; (4)Storage Temperature: -65 to +175 ℃; (5)Channel Temperature: 200 ℃.

Features

FLL21E090IK features: (1)High Voltage Operation : VDS=28V; (2)High Gain: 15dB(typ.)at Pout=43dBm(Avg.); (3)Broad Frequency Range : 2100 to 2200MHz; (4)Proven Reliability.

Diagrams

FLL21E090IK pin connection