Product Summary

The flm7785-4f is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.

Parametrics

flm7785-4f absolute maximum ratings: (1)Drain-Source Voltage: 15 V; (2)Gate-Source Voltage: -5 V; (3)Total Power Dissipation: 25 W; (4)Storage Temperature: -65 to +175 °C; (5)Channel Temperature: 175 °C.

Features

flm7785-4f features: (1)High Output Power: P1dB = 36.5 dBm (Typ.); (2)High Gain: G1dB = 8.5 dB (Typ.); (3)High PAE: ηadd = 34 % (Typ.); (4)IM3 = -46dBc@Po = 25.5dBm; (5)Broad Band: 12.7 ~ 8.5GHz; (6)Impedance Matched Zin/Zout = 50Ω; (7)Hermetically Sealed.

Diagrams

flm7785-4f pin connection

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FLM7785-4F
FLM7785-4F

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