Product Summary
The RJK0301DPB-00-J0 is a silicon N channel power MOSFET and power switch.
Parametrics
RJK0301DPB-00-J0 absolute maximum ratings: (1)Drain to source voltage, VDSS: 30V; (2)Gate to source voltage, VGSS: +16/–12V; (3)Drain current, ID: 60A; (4)Drain peak current, ID(pulse): 240A; (5)Body-drain diode reverse drain current, IDR: 60A; (6)Avalanche current, IAP: 30A; (7)Avalanche energy, EAR: 90mJ; (8)Channel dissipation, Pch: 65W; (9)Channel to Case Thermal Resistance, θch-C: 1.93℃/W; (10)Channel temperature, Tch: 150℃; (11)Storage temperature, Tstg: –55 to +150℃.
Features
RJK0301DPB-00-J0 features: (1)High speed switching; (2)Capable of 4.5V gate drive; (3)Low drive current; (4)High density mounting; (5)Low on-resistance RDS(on) = 2.3 mΩ typ. (at VGS=10V).
Diagrams
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MOSFET N-CH 30V W-PAK |
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RJK0225DNS-00#J5 |
MOSFET N-CH 25V 30A 8-HVSON |
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RJK0226DNS-00#J5 |
MOSFET N-CH 25V 40A 8-HVSON |
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RJK0230DPA-00#J5A |
MOSFET DL N-CH 25V 20A WPAK |
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RJK0301DPB-00#J0 |
MOSFET N-CH 30V 60A 5-LFPAK |
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