Product Summary

The mrf1946 an NPN silicon power transistor. It is designed for 12.5 volt large–signal power amplifiers in commercial and industrial equipment.

Parametrics

mrf1946 absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: 16 Vdc; (2)Collector–Base Voltage VCBO: 36 Vdc; (3)Emitter–Base Voltage VEBO: 4.0 Vdc; (4)Collector Current — Continuous IC: 8.0 Adc; (5)Total Device Dissipation @ TA = 25℃ PD: 100Watts; Derate above 25℃: 0.57W/℃; (6)Storage Temperature Range Tstg: –65 to +150 ℃; (7)Junction Temperature TJ: 200 ℃.

Features

mrf1946 features: (1)High Common Emitter Power Gain; (2)Specified 12.5 V, 175 MHz Performance; Output Power = 30 Watts; Power Gain = 10 dB; Efficiency = 60%; (3)Diffused Emitter Resistor Ballasting; (4)Characterized to 220 MHz; (5)Load Mismatch at High Line and Overdrive Conditions.

Diagrams

mrf1946 diagram

Image Part No Mfg Description Data Sheet Download Pricing
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MRF1946A
MRF1946A

TriQuint Semiconductor

RF Amplifier RF Bipolar Trans

Data Sheet

Negotiable 
MRF1946
MRF1946

TriQuint Semiconductor

RF Amplifier RF Bipolar Trans

Data Sheet

Negotiable