Product Summary

The mrf239 is an NPN Silicon RF power transistor. It is designed for 12.5V, mid-band large signal amplifier applications in industrial and commercial FM equipment operation in the 40-100MHz range.

Parametrics

mrf239 absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: 18 Vdc; (2)Collector–Base Voltage VCBO: 36 Vdc; (3)Emitter–Base Voltage VEBO: 4.0 Vdc; (4)Collector Current — Continuous IC: 3.5 Adc; (5)Total Device Dissipation @ TC = 25℃ PD: 50 Watts, Derate above 25℃: 285 W/℃; (6)Storage Temperature Range Tstg: – 65 to 200 ℃.

Features

mrf239 features: (1)Specified 12.5V, 90MHz characteristics, Output Power: 50W, Minimum Gain: 10dB, Efficiency: 55%.

Diagrams

mrf239 block diagram