(Hong Kong)
Product Summary
The mrf325 is an NPN silicon rf power transistor. It is designed for wideband large–signal driver and predriver amplifier stages in the 200–500 MHz frequency range.
Parametrics
mrf325 absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: 33 Vdc; (2)Collector–Base Voltage VCBO: 60 Vdc; (3)Emitter–Base Voltage VEBO: 4.0 Vdc; (4)Collector Current — Continuous IC: 2.2 Adc; (5)Total Device Dissipation @ TC = 25℃ PD: 55 Watts, Derate above 25℃: 310 W/℃; (6)Storage Temperature Range Tstg: – 65 to +150 ℃.
Features
mrf325 features: (1)Guaranteed Performance at 400 MHz, 28 V, Output Power = 20Watts, Power Gain = 10 dB Min, Efficiency = 50% Min; (2)100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR; (3)Gold Metallization System for High Reliability; (4)Computer-controlled Wirebonding Gives Consistent Input Impedance.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 MRF325 |
Other |
|
Data Sheet |
Negotiable |
|
||||
| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
MRF3010 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
MRF3094 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
MRF3095 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
MRF3104 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
MRF3105 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
MRF3106 |
Other |
|
Data Sheet |
Negotiable |
|
||||
