(Hong Kong)
Product Summary
The mrf373r1 is a RF Power Field-Effect Transistor. Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment.
Parametrics
mrf373r1 absolute maximum ratings: (1)Drain–Source Voltage VDSS: 65 Vdc; (2)Gate–Source Voltage VGS: 20 Vdc; (3)Drain Current – Continuous ID: 7 Adc; (4)Total Device Dissipation @ TC = 25°C PD: 173 W; (5)Storage Temperature Range Tstg: -65 to +150 °C; (6)Operating Junction Temperature TJ: 200 °C.
Features
mrf373r1 features: (1)Guaranteed CW Performance at 860 MHz, 28 Volts, Narrowband Fixture; (2)Typical Performance at 860 MHz, 28 Volts, Broadband Push–Pull Fixture; (3)Excellent Thermal Stability; (4)100% Tested for Load Mismatch Stress at All Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHz, 60 Watts CW; (5)In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
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 MRF373R1 |
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Data Sheet |
Negotiable |
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