Product Summary

The mrf390 is a RF Line NPN silicon pulsh-pull RF power transistor designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range.

Parametrics

mrf390 absolute maximum ratings: (1)Collector–Emitter Voltage, VCEO: 30 Vdc; (2)Collector–Base Voltage, VCBO: 60 Vdc; (3)Emitter–Base Voltage, VEBO: 4.0 Vdc; (4)Collector Current-Continuous ,IC: 16 Adc; (5)Total Device Dissipation, PD: 270W at TC = 25℃; 1.54W/℃ at Derate above 25℃; (6)Storage Temperature Range, Tstg: –65 to +150℃; (7)Junction Temperature, TJ: 200℃.

Features

mrf390 features: (1)Specified 28 Volt, 400 MHz Characteristics: Output Power = 125 W; Typical Gain = 10 dB; Efficiency = 55% (Typ); (2)Built–In Input Impedance Matching Networks for Broadband Operation; (3)Push–Pull Configuration Reduces Even Numbered Harmonics; (4)Gold Metallization System for High Reliability; (5)100% Tested for Load Mismatch.

Diagrams

mrf390 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MRF390
MRF390

Other


Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MRF3010
MRF3010

Other


Data Sheet

Negotiable 
MRF3094
MRF3094

Other


Data Sheet

Negotiable 
MRF3095
MRF3095

Other


Data Sheet

Negotiable 
MRF3104
MRF3104

Other


Data Sheet

Negotiable 
MRF3105
MRF3105

Other


Data Sheet

Negotiable 
MRF3106
MRF3106

Other


Data Sheet

Negotiable