Product Summary

The mrf452a is an NPN silicon rf power transistor. It is designed for power amplifier applications industrial, commercial and amateur radio equipment to 30MHz.

Parametrics

mrf452a absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: 20 Vdc; (2)Collector–Base Voltage VCBO: 40 Vdc; (3)Emitter–Base Voltage VEBO: 4.0 Vdc; (4)Collector Current — Continuous IC: 7.5 Adc; (5)Total Device Dissipation @ TC = 25℃ PD: 115 Watts, Derate above 25℃: 0.66 W/℃; (6)Storage Temperature Range Tstg: – 65 to +150 ℃.

Features

mrf452a features: (1)Specified 12.5 Volts, 30MHz characteristics: output power=50 Watts, Minimum gain=11 dB, Efficiency=50%.

Diagrams

mrf452a diagram