(Hong Kong)
Product Summary
The mrf5s21090h is an N-Channel Enhancement-Mode Lateral MOSFET. The mrf5s21090h is designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used i n Class AB for PCN - PCS/cel lular radio and WLL applications.
Parametrics
mrf5s21090h absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5, +65 Vdc; (2)Gate-Source Voltage VGS: -0.5, +15 Vdc; (3)Total Device Dissipation @ TC = 25°C PD: 269W; (4)Storage Temperature Range Tstg: - 65 to +150 °C; (5)Operating Junction Temperature TJ: 200 °C.
Features
mrf5s21090h features: (1)Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW Output Power; (2)Characterized with Series Equivalent Large-Signal Impedance Parameters; (3)Internally Matched, Controlled Q, for Ease of Use; (4)Qualified Up to a Maximum of 32 VDD Operation; (5)Integrated ESD Protection; (6)Lower Thermal Resistance Package; (7)Low Gold Plating Thickness on Leads, 40μ Nominal.; (8)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 MRF5S21090HR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV5 RF PWR LDMOS NI780H |
Data Sheet |
Negotiable |
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|
MRF5S21090HR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV5 RF PWR LDMOS NI780H |
Data Sheet |
Negotiable |
|
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|
MRF5S21090HSR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV5 RF LDMOS NI780HS |
Data Sheet |
Negotiable |
|
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|
MRF5S21090HSR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV5 RF LDMOS NI780HS |
Data Sheet |
Negotiable |
|
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