(Hong Kong)
Product Summary
The mrf6s21190hs is an N-Channel Enhancement-Mode Lateral MOSFET designed for W-CDMA base station applications with frequencies from 2110 to 2170MHz. Suitable for TDMA, CDMA andmulticarrier amplifier applications. The mrf6s21190hs is used in Class AB for PCN-PCS/cellular radio and WLL applications.
Parametrics
mrf6s21190hs absolute maximum ratings: (1)Drain-Source Voltage, VDSS: -0.5, +68 Vdc; (2)Gate-Source Voltage, VGS: -0.5, +12 Vdc; (3)Storage Temperature Range, Tstg: - 65 to +150℃; (4)Case Operating Temperature, TC: 150℃; (5)Operating Junction Temperature, TJ: 225℃.
Features
mrf6s21190hs features: (1)Characterized with Series Equivalent Larg--Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Qualified Up to a Maximum of 32 VDD Operation; (4)Integrated ESD Protection; (5)Optimized for Doherty Applications; (6)RoHS Compliant; (7)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
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 MRF6S21190HSR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6 2.1GHZ 54W NI880S |
Data Sheet |
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MRF6S21190HSR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6 2.1GHZ 54W NI880S |
Data Sheet |
Negotiable |
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