MRF6S23100HR3

N-Channel Enhancement-Mode Lateral MOSFET, 2300-2400 MHz, 20 W AVG, 28 V

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Price:: US $12.48~12.50 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 100 :	12.50 / Piece
101 ~ 1000 :	12.49 / Piece
1001 ~ 2000 :	12.48 / Piece

PartNumber:: MRF6S23100HR3

Brand:: Freescale Semiconductor, Inc - Freescale | Pack: | D/C: 13+

Availability:: Supply Ability: 2000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-07-25

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Part Number:MRF6S23100HR3
US $12.48 - 12.50
Quantity:

piece

Product Summary

The mrf6s23100hr3 is an N-Channel Enhancement-Mode Lateral MOSFET. Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications. To be used in Class AB and Class C for WLL applications.

Parametrics

mrf6s23100hr3 absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5, +68 Vdc; (2)Gate-Source Voltage VGS: -0.5, +12 Vdc; (3)Storage Temperature Range Tstg: -65 to +150 °C; (4)Case Operating Temperature TC: 150 °C; (5)Operating Junction Temperature TJ: 225 °C.

Features

mrf6s23100hr3 features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Qualified Up to a Maximum of 32 VDD Operation; (4)Integrated ESD Protection; (5)Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications; (6)RoHS Compliant; (7)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.