(Hong Kong)
Product Summary
The mrf6s9060nbr1 is an N-Channel Enhancement -Mode Lateral MOSFET. Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.
Parametrics
mrf6s9060nbr1 absolute maximum ratings: (1)Drain-Source Voltage VDSS: - 0.5, +68 Vdc; (2)Gate-Source Voltage VGS: - 0.5, +12 Vdc; (3)Storage Temperature Range Tstg: - 65 to +150 °C; (4)Case Operating Temperature TC: 150 °C; (5)Operating Junction Temperature TJ: 225 °C.
Features
mrf6s9060nbr1 features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Integrated ESD Protection; (3)225°C Capable Plastic Package; (4)N Suffix Indicates Lead-Free Terminations. RoHS Compliant.; (5)TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel; (6)TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 MRF6S9060NBR1 |
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MOSFET RF N-CH 28V 14W TO-272-2 |
Data Sheet |
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