(Hong Kong)
Product Summary
The MRF892 is a Designed for Class AB, Cellular Base Station Applications up to 900 MHz.
Parametrics
MRF892 absolute maximum ratings: (1)IC: 2.5 A; (2)VCBO: 50 V; (3)VCEO: 30 V; (4)VEBO: 4.0 V; (5)PDISS: 50 W @ TC = 25 °C; (6)TJ: -65 °C to +200 °C; (7)TSTG: -65 °C to +150 °C; (8)θJC: 3.5 °C/W.
Features
MRF892 features: (1)Internal Input Matching Network; (2)PG =8.5 dB at 14 W/900 MHz; (3)Omnigold Metalization System.
Diagrams
| Image | Part No | Mfg | Description |  |
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 MRF892 |
Other |
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Data Sheet |
Negotiable |
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MRF837 |
Other |
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Data Sheet |
Negotiable |
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MRF8372LF |
Advanced Semiconductor, Inc. |
Transistors RF Bipolar Power RF Transistor |
Data Sheet |
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MRF8372LFR1 |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
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MRF8372LFR2 |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
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MRF838A |
Other |
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Data Sheet |
Negotiable |
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MRF839F |
Other |
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Data Sheet |
Negotiable |
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