Product Summary

The IRLZ24NLPBF is a HEXFET Power MOSFET. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.

Parametrics

IRLZ24NLPBF absolute maximum ratings: (1)continusous drain current: 18A; (2)Gate-Source Voltage VGS: ± 16 V; (3)Pulsed Drain Current a IDM: 72 A; (4)Linear Derating Factor: 0.30 W/°C; (5)Single Pulse Avalanche Energy b EAS: 68 mJ; (6)Maximum Power Dissipation TC = 25 °C PD: 3.8 W; (7)Peak Diode Recovery dV/dt c dV/dt: 5.0 V/ns; (8)Operating Junction and Storage Temperature Range TJ, Tstg: - 55°C to + 175 °C; (9)Soldering Recommendations (Peak Temperature)d for 10 s: 300 °C.

Features

IRLZ24NLPBF features: (1)logic-level gate drive; (2)advanced process technology; (3)surface mount; (4)low-profile through-hole; (5)175°C operating temperature; (6)fast switching; (7)fully avalance rated; (8)lead-free.

Diagrams

IRLZ24NLPBF plackage dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRLZ24NLPBF
IRLZ24NLPBF


MOSFET N-CH 55V 18A TO-262

Data Sheet

0-1: $0.97
1-10: $0.60
10-100: $0.44
100-250: $0.41
250-500: $0.39
500-1000: $0.36
1000-2500: $0.35
2500-10000: $0.32
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRLZ14
IRLZ14

Vishay/Siliconix

MOSFET N-Chan 60V 10 Amp

Data Sheet

0-445: $1.51
445-500: $1.36
500-1000: $1.07
1000-2000: $0.99
IRLZ14, SiHLZ14
IRLZ14, SiHLZ14

Other


Data Sheet

Negotiable 
IRLZ144NPbF
IRLZ144NPbF

Other


Data Sheet

Negotiable 
IRLZ14L
IRLZ14L

Vishay/Siliconix

MOSFET N-Chan 60V 10 Amp

Data Sheet

Negotiable 
IRLZ14PBF
IRLZ14PBF

Vishay/Siliconix

MOSFET N-Chan 60V 10 Amp

Data Sheet

0-1: $0.55
1-10: $0.42
10-100: $0.37
100-250: $0.32
IRLZ14S
IRLZ14S

Vishay/Siliconix

MOSFET N-Chan 60V 10 Amp

Data Sheet

Negotiable