(Hong Kong)
Product Summary
The IRLZ24NLPBF is a HEXFET Power MOSFET. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.
Parametrics
IRLZ24NLPBF absolute maximum ratings: (1)continusous drain current: 18A; (2)Gate-Source Voltage VGS: ± 16 V; (3)Pulsed Drain Current a IDM: 72 A; (4)Linear Derating Factor: 0.30 W/°C; (5)Single Pulse Avalanche Energy b EAS: 68 mJ; (6)Maximum Power Dissipation TC = 25 °C PD: 3.8 W; (7)Peak Diode Recovery dV/dt c dV/dt: 5.0 V/ns; (8)Operating Junction and Storage Temperature Range TJ, Tstg: - 55°C to + 175 °C; (9)Soldering Recommendations (Peak Temperature)d for 10 s: 300 °C.
Features
IRLZ24NLPBF features: (1)logic-level gate drive; (2)advanced process technology; (3)surface mount; (4)low-profile through-hole; (5)175°C operating temperature; (6)fast switching; (7)fully avalance rated; (8)lead-free.
Diagrams
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Pricing (USD) |
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 IRLZ24NLPBF |
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MOSFET N-CH 55V 18A TO-262 |
Data Sheet |
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IRLZ14, SiHLZ14 |
Other |
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Data Sheet |
Negotiable |
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IRLZ144NPbF |
Other |
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Data Sheet |
Negotiable |
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IRLZ14SPBF |
Vishay/Siliconix |
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Data Sheet |
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IRLZ14STRRPBF |
Vishay/Siliconix |
MOSFET N-Chan 60V 10 Amp |
Data Sheet |
Negotiable |
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IRLZ24LPBF |
Vishay/Siliconix |
MOSFET N-Chan 60V 17 Amp |
Data Sheet |
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IRLZ34NLPBF |
International Rectifier |
MOSFET MOSFT 55V 30A 35mOhm 16.7nC LogLvl |
Data Sheet |
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